isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE 2SA1306 -160 2SA1306A -180 2SA1306B -200 2SA1306 -160 2SA1306A -180 2SA1306B -200 Emitter-Base Voltage UNIT V V -5 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous -0.15 A PC Collector Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1306 V(BR)CEO Collector-Emitter Breakdown Voltage 2SA1306A TYP. MAX UNIT -160 IC= -10mA; IB= 0 2SA1306B V -180 -200 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -5V -1.0 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.0 μA hFE DC Current Gain IC= -100mA ; VCE= -5V Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V 100 MHz Output Capacitance IE= 0 ; VCB= -10V;ftest= 1.0MHz 30 pF fT COB MIN hFE Classifications O Y 70-140 120-240 isc Website：www.iscsemi.cn 2 70 240