Inchange Semiconductor Product Specification 2SA1388 Silicon PNP Power Transistors · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current (DC) -5 A ICM Collector current (pulse) -8 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1388 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.15A -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-3A ;IB=-0.15A -0.9 -1.2 V ICBO Collector cut-off current VCB=-100V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -1 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-3A ; VCE=-1V 30 Trainsition frequency IC=-1A ; VCE=-4V 60 MHz Collector output capacitance IE=0; VCE=-10V;f=1MHz 200 pF 0.2 μs 1.0 μs 0.1 μs fT Cob CONDITIONS MIN TYP. MAX -80 B B UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=-0.15A VCC=30V;RL=10Ω hFE-1 Classifications O Y 70-140 120-240 2 Inchange Semiconductor Product Specification 2SA1388 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SA1388 Silicon PNP Power Transistors 4