ISC 2SA1470

Inchange Semiconductor
Product Specification
2SA1470
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SC3747
·Low saturation voltage
·Fast switching time
APPLICATIONS
·Inductance,lamp drivers
·Inverters ,converters
·Power amplification
·High-speed switching
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-7
A
ICM
Collector current-peak
-10
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA1470
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;RBE=∞
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-3.5A IB=-0.175A
-0.4
V
ICBO
Collector cut-off current
VCB=-40V IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE
DC current gain
IC=-1A ; VCE=-2V
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
CONDITIONS
MIN
TYP.
70
MAX
UNIT
280
100
MHz
0.1
μs
0.5
μs
0.1
μs
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-3.0A;IB1=-IB2=-0.15A
VCC=20V ,RL=6.67Ω
hFE Classifications
Q
R
S
70-140
100-200
140-280
2
Inchange Semiconductor
Product Specification
2SA1470
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SA1470
Silicon PNP Power Transistors
4