INCHANGE Semiconductor Product Specification 2SA1726 Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4512 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Collector Current-Continuous -3 A PC Total Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range INCHANGE Semiconductor Product Specification 2SA1726 Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -0.5 V ICBO Collector Cutoff Current VCB= -80V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -2A ; VCE= -4V Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 20 MHz Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 150 pF 0.18 μs 1.10 μs 0.21 μs fT COB CONDITIONS MIN TYP. MAX -80 UNIT V B 50 180 Switching Times ton Turn-on Time tstg Storage Time tf IC= -3A ,RL= 10Ω, IB1= -IB2= -0.3A,VCC= -30V Fall Time hFE Classifications O P Y 50-100 70-140 90-180 2