isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1860 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4886 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -14 A IB Base Current-Continuous -3 A PC Collector Power Dissipation @TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1860 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -150V ; IE=0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -100 μA hFE DC Current Gain IC= -5A ; VCE= -4V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 400 pF Current-Gain—Bandwidth Product IE= 2A ; VCE= -12V 50 MHz 0.25 μs 0.85 μs 0.2 μs fT CONDITIONS MIN TYP. MAX -150 UNIT V B 50 Switching Times ton Turn-On Time tstg Storage Time tf IC= -5A; IB1= -IB2= -0.5A; VCC= -60V; RL= 12Ω Fall Time hFE Classifications O P Y 50-100 70-140 90-180 isc Website：www.iscsemi.cn 2