Inchange Semiconductor Product Specification 2SA1988 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High collector-emitter voltage APPLICATIONS ・For audio frequency power amplifier and industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL PARAMETER D N O IC VALUE UNIT -200 V -200 V -5 V Collector current -7 A ICM Collector current-peak -10 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Open emitter M E S GE N A H C IN CONDITIONS Open base Open collector TC=25℃ Inchange Semiconductor Product Specification 2SA1988 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage VBEsat TYP. MAX UNIT IC=-5A; IB=-0.5A -0.6 -2.0 V Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.3 -2.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 70 hFE-2 DC current gain IC=-3.5A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 270 pF fT Transition frequency IC=-1A ; VCE=-5V 40 MHz 导体 半 电 固 MIN 200 D N O IC R O T UC M E S GE N A H INC 2 Inchange Semiconductor Product Specification 2SA1988 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SA1988 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4