isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA490 DESCRIPTION ·High Collector Current:: IC= -3A ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -40V(Min) ·Complement to Type 2SC790 APPLICATIONS ·10 Watts output applications ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IE Emitter Current-Continuous 3 A PC Total Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA490 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.2 V VBE(on) Base-Emitter On Voltage IC= -2A ; VCE= -2V -1.8 V ICBO Collector Cutoff Current VCB= -30V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V 40 hFE-2 DC Current Gain IC= -2A ; VCE= -2V 13 Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -2V 3 Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz fT COB CONDITIONS O Y 40-80 70-140 120-240 isc Website：www.iscsemi.cn TYP. B hFE-1 Classifications R MIN 2 MAX UNIT 240 MHz 150 pF