Inchange Semiconductor Product Specification 2SA627 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·Large current capability APPLICATIONS ·Power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V -7 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA627 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V VBE(sat) Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-2A ; VCE=-5V Transition frequency IC=-0.5A ; VCE=-10V fT CONDITIONS B 2 MIN TYP. 30 MAX UNIT 120 15 MHz Inchange Semiconductor Product Specification 2SA627 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3