isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA743A DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -80V (Min) ·Complement to Type 2SC1212A APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -4 V Collector Current-Continuous -1 A IC Collector Power Dissipation @ Ta=25℃ 0.75 PC W Total Power Dissipation @ TC=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 8 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA743A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -80 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -1.5 V VBE(on) Base-Emitter On Voltage IC= -50mA ; VCE= -4V -1.0 V ICER Collector Cutoff Current VCE= -80V; RBE= 1kΩ -20 μA hFE-1 DC Current Gain IC= -50mA ; VCE= -4V 60 hFE-2 DC Current Gain IC= -1A ; VCE= -4V 20 Current-Gain—Bandwidth Product IC= -30mA ; VCE= -4V fT PARAMETER B hFE-1 Classifications B C 60-120 100-200 isc Website：www.iscsemi.cn 2 200 120 MHz