isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA744 DESCRIPTION ·High Power Dissipation: PC= 70W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) ·Complement to Type 2SC1402 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Continuous -3 A PC Collector Power Dissipation @TC=25℃ 70 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA744 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -1.0 mA hFE DC Current Gain IC= -3A ; VCE= -4V Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V fT CONDITIONS B MIN TYP. MAX -80 UNIT V B 30 15 MHz 1.2 μs 2.0 μs 0.55 μs Switching times tr tstg tf Rise Time Storage Time Fall Time isc Website：www.iscsemi.cn IC= -3A ,RL= 4Ω, VCC= -12V IB1= -0.2A; IB2= 0.1A