ISC 2SA747A

Inchange Semiconductor
Product Specification
2SA747
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·Complement to type 2SC1116
APPLICATIONS
·For audio and general purpose
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-10
A
IB
Base current
-4
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA747
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-1.0
mA
hFE
DC current gain
IC=-3A ; VCE=-4V
Transition frequency
IC=-0.5A ; VCE=-12V
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
30
15
MHz
1.2
μs
3.3
μs
0.8
μs
Switching times
tr
tstg
tf
Rise time
Storage time
VCC=-12V;RL=4Ω;IC=-3A
IB1=-200mA,IB2=50mA
Fall time
2
Inchange Semiconductor
Product Specification
2SA747
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3