Inchange Semiconductor Product Specification 2SA765 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V -6 A 40 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA765 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -80 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.5 V VBEsat Base-emitter saturation voltage IC=-4A; IB=-0.4A -2.0 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V fT CONDITIONS 2 MIN TYP. MAX UNIT 50 10 MHz Inchange Semiconductor Product Specification 2SA765 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3