Inchange Semiconductor Product Specification 2SA766 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·High power dissipation ·Complement to type 2SC1450 APPLICATIONS ·Line-operated vertical deflection output ·Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -0.4 A ICM Collector current-peak -1.2 A PC Collector power dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC≤80℃ Inchange Semiconductor Product Specification 2SA766 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;L=25mH,RBE=5kΩ Emitter-base breakdown voltage IE=-1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -1.0 V VBE-1 Base-emitter saturation voltage IC=-0.1A ; VCE=-5V -0.8 V VBE-2 Base-emitter saturation voltage IC=-0.5A ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -30 μA hFE-1 DC current gain IC=-0.1A ; VCE=-5V 35 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 35 Transition frequency IE=0.1A ; VCB=-10V V(BR)EBO fT CONDITIONS 2 MIN TYP. MAX UNIT -150 V -5 V 150 15 MHz Inchange Semiconductor Product Specification 2SA766 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3