Inchange Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA814 VCBO Collector-base voltage -120 Open base 2SA815 VEBO Emitter-base voltage V -100 2SA814 Collector-emitter voltage UNIT -120 Open emitter 2SA815 VCEO VALUE V -100 Open collector -5 V IC Collector current -1 A IE Emitter current 1 A PC Collector power dissipation 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA814 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT -120 IC=-10mA ,IB=0 2SA815 V(BR)EBO MIN V -100 Emitter-base breakdown voltage IE=-1.0mA ,IC=0 Collector-emitter saturation voltage IC=-500mA; IB=-50mA -0.5 V VBE Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-50V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE-1 DC current gain IC=-150mA ; VCE=-5V 70 hFE-2 DC current gain IC=-500mA ; VCE=-5V 40 COB Collector output capacitance IE=0 ; VCB=-10V;f=1MHz Transition frequency IC=-150mA ; VCE=-5V VCEsat fT Y 70-140 120-240 V B hFE-1 Classifications O -5 2 10 240 30 pF 30 MHz Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA814 2SA815 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3