Inchange Semiconductor Product Specification 2SA839 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC1669 ·High breakdown voltage APPLICATIONS ·Audio power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A IE Emitter current 1.5 A PC Collector power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA839 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -5 V Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.5 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-10V -1.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -20 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-0.5A ; VCE=-10V 40 hFE-2 DC current gain IC=-1A ; VCE=-10V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz fT Transition frequency IC=-0.5A ; VCE=-10V VCEsat CONDITIONS hFE-1 Classifications R O Y 40-80 70-140 120-240 2 MIN TYP. MAX UNIT 240 100 pF 6 MHz Inchange Semiconductor Product Specification 2SA839 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3