ISC 2SA878

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA877
DESCRIPTION
·High Power Dissipation: PC= 100W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.)
APPLICATIONS
·Designed for power amplifier and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
-4
A
PC
Collector Power Dissipation
@TC=25℃
100
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA877
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA ;IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
-2.0
V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
-0.1
mA
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
-0.1
mA
hFE
DC Current Gain
IC= -3A ; VCE= -4V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
255
pF
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -12V
15
MHz
fT
isc Website:www.iscsemi.cn
CONDITIONS
MIN
TYP.
MAX
-80
UNIT
V
30