Inchange Semiconductor Product Specification 2SA887 Silicon PNP Power Transistors DESCRIPTION ·With TO-202 package ·Complement to type 2SC1848 APPLICATIONS ·Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -2 A ICM Collector current-peak -3 A PC Collector power dissipation Ta=25℃ 1.2 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA887 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -70 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A -0.6 -1.2 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2 A -1.0 -1.5 V hFE-1 DC current gain IC=-100mA ; VCE=-5V 30 hFE-2 DC current gain IC=-1A ; VCE=-5V 50 ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 μA ICEO Collector cut-off current VCE=-20V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA fT Transition frequency IE=0.5A ; VCB=-5V B B hFE-2 Classifications P Q R 50-100 80-160 120-220 MIN 2 TYP. MAX UNIT 220 150 MHz Inchange Semiconductor Product Specification 2SA887 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3