ISC 2SA914

Inchange Semiconductor
Product Specification
2SA914
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-126 package
·Complement to type 2SC1953
·Good linearity of hFE
·High VCEO
APPLICATIONS
·For audio frequency power pre-amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-50
mA
ICM
Collector current-Peak
-100
mA
PC
Collector power dissipation
1
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA914
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-0.1mA;IB=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10μA ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-30mA ;IB=-3mA
ICBO
Collector cut-off current
IEBO
VCEsat
CONDITIONS
MIN
TYP.
MAX
UNIT
-1.0
V
VCB=-100V; IE=0
-1
μA
Emitter cut-off current
VEB=-5V; IC=0
-1
μA
hFE
DC current gain
IC=-10mA ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IE=10mA ; VCB=-10V
‹
hFE Classifications
Q
R
S
T
90-155
130-220
185-330
260-450
2
90
450
5
200
pF
MHz
Inchange Semiconductor
Product Specification
2SA914
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3