isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1007 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1378 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V -0.7 A IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ 10 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 1 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1007 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -80 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -2mA; IB= 0 -80 V V(BR)EBO Emitter-Base Breakdown Vltage IE= -50μA; IC=0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -0.4 V ICBO Collector Cutoff Current VCB= -50V; IE= 0 -0.5 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.5 μA hFE DC Current Gain IC= -100mA; VCE= -3V Current-Gain—Bandwidth Product IC= -50mA; VCE= -10V 100 MHz Output Capacitance IE= 0; VCB= -10V, ftest= 1MHz 14 pF fT COB PARAMETER hFE Classifications P Q R 82-180 120-270 180-390 isc Website：www.iscsemi.cn 2 82 390