Inchange Semiconductor Product Specification 2SB1034 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain ・DARLINGTON APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS VALUE UNIT -80 V Open base -80 V Open collector -8 V -2 A -0.5 A 15 W IC M E ES G N A CH IN OND R O T UC Open emitter IC Collector current (DC) IB Base current (DC) PC Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1034 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-1mA -2.0 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-8V; IC=0 -4 mA hFE DC current gain IC=-1A ; VCE=-2V COB Output capacitance IE=0; VCB=-10V;f=1MHz fT Transition frequency 体 半导 固电 Switching times ton Turn-on time ts Storage time tf Fall time RL=30Ω IB1=IB2=1mA VCC=-30V 2 TYP. MAX -80 UNIT V 2000 30 R O T UC IC=-0.5A ; VCE=-2V D N O IC M E S GE N A H INC MIN pF 50 MHz 0.4 μs 2.0 μs 0.4 μs Inchange Semiconductor Product Specification 2SB1034 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3