Inchange Semiconductor Product Specification 2SB1054 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1485 ・High transition frequency ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL OND VALUE UNIT -100 V -100 V -5 V Collector current -5 A ICP Collector current-peak -8 A PC Collector power dissipation VCBO VCEO VEBO IC PARAMETER R O T UC Collector-base voltage IC M E ES G N A INCH Collector-emitter voltage Emitter-base voltage CONDITIONS Open emitter Open base Open collector TC=25℃ 60 Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1054 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE MAX UNIT IC=-3A ;IB=-0.3A -2.0 V Base-emitter on voltage IC=-3A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-100V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 40 hFE -3 DC current gain IC=-3A ; VCE=-5V 20 导体 半 电 CONDITIONS 固 COB Output capacitance fT Transition frequency R 40-80 IC M E ES G N A CH hFE-2 classifications IN Q P 60-120 100-200 2 TYP. 200 TOR C U D ON IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V MIN 170 20 pF MHz Inchange Semiconductor Product Specification 2SB1054 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3