Inchange Semiconductor Product Specification 2SB1069 2SB1069A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol 体 半导 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO PARAMETER D N O IC 2SB1069 Collector-base voltage Open emitter M E S GE 2SB1069A VCEO VEBO N A H INC Collector-emitter voltage Emitter-base voltage R O T UC CONDITIONS 2SB1069 VALUE -40 Open collector V -50 -20 Open base 2SB1069A UNIT V -40 -5 V IC Collector current -4 A ICM Collector current-peak -8 A PC Collector power dissipation Ta=25℃ 1.4 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1069 2SB1069A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB1069 V(BR)CEO MIN TYP. MAX UNIT -20 Collector-emitter breakdown voltage IC=-10mA ,IB=0 V -40 2SB1069A VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.1A -0.5 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-1A ; VCE=-2V 60 Transition frequency IC=-0.5A ; VCE=-5V fT 导体 半 电 固 Switching times ton Turn-on time tstg Storage time tf IN IC=-2A; IB1=-IB2=-0.2A Fall time hFE-2 classifications R Q P 60-120 90-180 130-260 2 TOR 150 MHz 0.3 μs 0.4 μs 0.1 μs C U D ON IC M E ES G N A CH 260 Inchange Semiconductor Product Specification 2SB1069 2SB1069A Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3