isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain:hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage:V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A ·Complement to Type 2SD1646 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. VALUE UNIT -100 n c . i m e V -100 V s c s .i ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL ww PARAMETER w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A PC Collector Power Dissipation TC=25℃ 25 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SB1286 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1286 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA, IB= 0 -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA, IE= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -3 mA hFE DC Current Gain IC= -1A; VCE= -2V COB Output Capacitance B isc Website：www.iscsemi.cn TYP. B n c . i m e s c s i . w w w MIN IE= 0; VCB= -10V; f= 1MHz 1000 MAX UNIT 10000 35 pF