Inchange Semiconductor Product Specification 2SB1315 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PML package ・Low collector saturation voltage APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol 导体 半 电 R O T UC Absolute maximum ratings (Ta=25℃) 固 SYMBOL VCBO VCEO VEBO IC PARAMETER N A H INC Emitter-base voltage Open emitter Open base Open collector Collector current Ta=25℃ PC D N O IC M E S GE Collector-base voltage Collector-emitter voltage CONDITIONS MAX UNIT -120 V -120 V -5 V -8 A 3.5 Collector dissipation W TC=25℃ 65 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1315 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -1.5 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE DC current gain IC=-1A ; VCE=-5V fT COB 体 半导 CONDITIONS Transition frequency IC=-1A ; VCE=-5V Collector output capacitance f=1MHz;VCB=-10V 固电 IN 2 TYP. 60 MAX UNIT 320 R O T UC OND IC M E ES G N A CH MIN 65 MHz 200 pF Inchange Semiconductor Product Specification 2SB1315 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3