isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1334 DESCRIPTION ·High Collector Current:: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1778 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w n c . i m e VALUE UNIT -80 V w w -60 V Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1334 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -10 μA IEBO Emitter Cutoff Current μA hFE DC Current Gain COB Output Capacitance m e s isc -10 fT CONDITIONS B B w. w w IC= -1A; VCE= -5V IE=0; VCB= -10V; f= 1MHz IE= 0.5A; VCE= -5V hFE Classifications D E F 60-120 100-200 160-320 isc Website：www.iscsemi.cn TYP. B VEB= -4V; IC= 0 Current-Gain—Bandwidth Product MIN 2 n c . i 60 MAX UNIT 320 100 pF 12 MHz