Inchange Semiconductor Product Specification 2SB1339 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A ICM Collector current-peak -10 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1339 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-50μA; IE=0 -120 V VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-6mA -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA hFE DC current gain IC=-2A ; VCE=-3V fT Transition frequency IC=-0.5A ; VCE=-5V 12 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 70 pF B 2 2000 MAX UNIT 20000 Inchange Semiconductor Product Specification 2SB1339 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3