Inchange Semiconductor Product Specification 2SB1362 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD2053 APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Tc=25℃) 固 SYMBOL VALUE UNIT -150 V -150 V -5 V Collector current (DC) -9 A ICM Collector current -peak -15 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCBO VCEO VEBO IC PARAMETER Collector-base voltage Emitter-base voltage D N O IC Open emitter M E S GE N A H INC Collector-emitter voltage CONDITIONS Open base Open collector TC=25℃ Inchange Semiconductor Product Specification 2SB1362 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A -2.0 V VBE Base-emitter on voltage IC=-7A;VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-150V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 60 DC current gain IC=-7A ; VCE=-5V 15 Transition frequency IC=-0.5A ; VCE=-5V hFE-3 fT 导体 半 电 固 COB CONDITIONS N A H INC f=1MHz;VCB=-10V hFE-2 Classifications Q P 60-120 100-200 2 TYP. MAX -150 UNIT V 200 R O T UC D N O IC M E S GE Collector output capacitance MIN 15 MHz 270 pF Inchange Semiconductor Product Specification 2SB1362 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3