Inchange Semiconductor Product Specification 2SB553 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD553 ・Low collector saturation voltage APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC PC Emitter-base voltage CONDITIONS VALUE UNIT -70 V Open base -50 V Open collector -5 V -7 A IC M E ES G N A CH IN OND R O T UC Open emitter Collector current (DC) Ta=25℃ 1.5 TC=25℃ 40 Collector dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Inchange Semiconductor Product Specification 2SB553 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-4A; IB=-0.4A -0.9 -1.2 V ICBO Collector cut-off current VCB=-70V; IE=0 -30 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-4A ; VCE=-1V 30 COB Collector output capacitance IE=0 ; VCB=-10V; f=1MHz 250 Transition frequency IC=-1A ; VCE=-4V 10 MHz 0.2 μs 2.5 μs 0.5 μs fT 导体 半 电 CONDITIONS 固 Switching times ton Turn-on time ts Storage time tf Fall time O Y 70-140 120-240 2 MAX UNIT V 240 TOR C U D ON IB1=-IB2=-0.3A; VCC≈-30V RL=10Ω hFE-1Classifications TYP. -50 IC M E ES G N A INCH MIN pF Inchange Semiconductor Product Specification 2SB553 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 Inchange Semiconductor Product Specification 2SB553 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4