isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB613 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -250V(Min) ·High Power Dissipation: PC= 150W(Max)@TC=25℃ ·High Current Capability ·Complement to Type 2SD583 APPLICATIONS ·Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current -5 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB613 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -250 V(BR)CBO Collector-Emitter Breakdown Voltage IC= -1mA ;IE= 0 -250 V(BR)EBO Emitter-Base Breakdown Voltage IE=-1mA ;IC=0 -5 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V ICBO Collector Cutoff Current VCB= -250V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE DC Current Gain IC= -1A ; VCE= -2V isc Website：www.iscsemi.cn CONDITIONS MIN 35 MAX UNIT V V 200 INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Website：www.iscsemi.cn isc Product Specification 2SB613