Inchange Semiconductor Product Specification 2SB616 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD586 APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V -5 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB616 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V VBE Base-emitter on voltage IC=-1A;VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-5V Transition frequency IC=-1A ; VCE=-5V Collector output capacitance IE=0;f=1MHz;VCB=-10V VCEsat fT COB CONDITIONS MIN TYP. B 2 MAX UNIT 50 11 MHz 140 pF Inchange Semiconductor Product Specification 2SB616 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3