isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB722 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) ·High Power Dissipation: PC= 150W(Max)@TC=25℃ ·High Current Capability APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL n c . i m e s c s i . w PARAMETER VALUE UNIT w w -160 V -160 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Baser Current-Continuous -4 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB722 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 -160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current -0.1 mA hFE DC Current Gain isc Website：www.iscsemi.cn TYP. n c . i m e s c s i . w w w MIN VEB= -5V; IC= 0 IC= -1A; VCE= -5V 50 MAX UNIT