Inchange Semiconductor Product Specification 2SB966 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1289 APPLICATIONS ・For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO VCEO VEBO D N O IC PARAMETER M E S GE Collector-base voltage N A H INC Collector-emitter voltage CONDITIONS Emitter-base voltage Open emitter Open base Open collector VALUE UNIT -120 V -120 V -5 V IC Collector current -8 A ICM Collector current-peak -12 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB966 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -1.5 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE -1 DC current gain IC=-1A ; VCE=-5V 60 hFE -2 DC current gain IC=-5A ; VCE=-5V 20 导体 半 电 固 COB Output capacitance fT Transition frequency IE=0 ; VCB=-10V;f=1MHz MIN M E S GE N A H INC 2 MAX -120 UNIT V 320 R O T UC D N O IC IC=-1A ; VCE=-5V TYP. 200 pF 65 MHz Inchange Semiconductor Product Specification 2SB966 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3