isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB993 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -50V(Min) ·Collector Power Dissipation: PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max)@ IC= -4A ·Complement to Type 2SD1363 APPLICATIONS ·High current switching applications. ·Power amplifier applications. n c . i m e s c s i . w ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL w w PARAMETER VALUE UNIT -70 V -50 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous -1 A Collector Power Dissipation @Ta=25℃ 1.5 Collector Power Dissipation @TC=25℃ 40 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ PC isc Website：www.iscsemi.cn W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB993 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.2 V ICBO Collector Cutoff Current VCB= -70V; IE= 0 -30 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -1A; VCE= -1V hFE-2 DC Current Gain COB Output Capacitance fT ton Turn-on Time tstg Storage Time tf s c s .i 70-140 120-240 isc Website：www.iscsemi.cn UNIT V 70 240 30 IE= 0; VCB= -10V; ftest= 1MHz 250 pF IC= -1A; VCE= -4V 10 MHz 0.2 μs 2.5 μs 0.5 μs VCC= -30V, RL= 10Ω, IB1= -IB2= -0.3A, hFE-1 Classifications Y MAX -50 n c . i m e Fall Time O TYP. B ww w MIN B IC= -4A; VCE= -1V Current-Gain—Bandwidth Product Switching Times CONDITIONS 2