ISC 2SC1030

Inchange Semiconductor
Product Specification
2SC1030
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
APPLICATIONS
·For low frequency power amplifier
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
6
A
50
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1030
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
80
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=5A; IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
35
hFE-2
DC current gain
IC=5A ; VCE=5V
22
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
‹
CONDITIONS
hFE-1 classifications
A
B
C
35-70
60-120
100-200
2
MIN
TYP.
MAX
UNIT
200
10
MHz
Inchange Semiconductor
Product Specification
2SC1030
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3