Inchange Semiconductor Product Specification 2SC1108 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High breakdown voltage :VCEO=100V ·High current :4A APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V 4 A 40 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1108 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 100 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A;IB=0.3 A 1.5 V VBEsat Base-emitter saturation voltage IC=3A;IB=0.3 A 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=4V fT Transition frequency IC=0.5A ; VCE=12V COB Output capacitance IE=0; VCB=10V;f=1MHz 2 MIN TYP. 100 UNIT 320 10 25 MAX MHz pF Inchange Semiconductor Product Specification 2SC1108 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3