Inchange Semiconductor Product Specification 2SC1140 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 15 A 150 W IC Collector current PT Total power dissipation Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.0 ℃/W Tmb=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base Inchange Semiconductor Product Specification 2SC1140 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 1.5 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A 1.6 V ICBO Collector cut-off current VCB=800V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 50 hFE-2 DC current gain IC=7.5A ; VCE=5V 10 25 Transition frequency IC=1A ; VCE=5V fT CONDITIONS 2 MIN TYP. 10 MAX UNIT MHz Inchange Semiconductor Product Specification 2SC1140 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3