Inchange Semiconductor Product Specification 2SC1156 Silicon NPN Power Transistors DESCRIPTION ·With TO-202 package ·High transition frequency ·Complement to type 2SA646 APPLICATIONS ·For power amplifier switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 90 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V 0.8 A 7 W IC Collector current PC Collector power dissipation Tj Junction temperature -40~150 ℃ Tstg Storage temperature -40~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1156 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=300mA IB=30m A 1.2 V VBEsat Base-emitter saturation voltage IC=300mA IB=30m A 1.5 V V(BR)CBO Collector-base breakdown voltage IC=100μA;IE=0 90 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=100μA; IC=0 5 V ICBO Collector cut-off current VCB=90V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE DC current gain IC=300mA ; VCE=4V Transition frequency IE=100mA ; VCB=10V fT 2 20 300 70 MHz Inchange Semiconductor Product Specification 2SC1156 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3