ISC 2SC1325

Inchange Semiconductor
Product Specification
2SC1325
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Designed for use in large screen
color deflection circuits
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
6
A
ICM
Collector current-peak
12
A
IB
Base current
2
A
PD
Total power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1. 56
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2SC1325
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=5 A;IB=1.2 A
4.0
V
VBEsat
Base-emitter saturation voltage
IC=5 A;IB=1.2 A
1.1
V
ICES
Collector cut-off current
VCE=1500V;VBE=0
1.0
mA
ICBO
Collector cut-off current
VCB=1000V; IE=0
20
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
200
μA
hFE-1
DC current gain
IC=1A ; VCE=15V
10
45
hFE-2
DC current gain
IC=5A ; VCE=15V
5
35
ts
Storage time
tf
Fall time
CONDITIONS
MIN
TYP.
MAX
600
V
10
μs
0.8
μs
IC=5A ;IB1=-IB2=1.0A
PW=20μs
2
UNIT
Inchange Semiconductor
Product Specification
2SC1325
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3