Inchange Semiconductor Product Specification 2SC1368 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 25 V VCEO Collector-emitter voltage Open base 25 V VEBO Emitter-base voltage Open collector 5 V 1.5 A 8 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1368 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 25 V V(BR)CBO Collector-base breakdown voltage IC=50μA; IE=0 25 V V(BR)EBO Emitter-base breakdown voltage IE=50μA; IB=0 5 V Collector-emitter saturation voltage IC=1.5A; IB=0.15A 0.8 V ICBO Collector cut-off current VCB=25V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE DC current gain IC=0.5A ; VCE=2V Transition frequency IC=0.5A ; VCE=5V VCEsat fT CONDITIONS 2 MIN TYP. 60 MAX UNIT 320 180 MHz Inchange Semiconductor Product Specification 2SC1368 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3