Inchange Semiconductor Product Specification 2SC1894 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage VALUE UNIT Open emitter 1500 V Open base 600 V 5 V 5 A 50 W M E S GE N A H INC Collector-emitter voltage D N O IC Emitter-base voltage R O T UC CONDITIONS Open collector IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1894 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=750V; IE=0 50 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=0.1A ; VCE=10V Collector output capacitance IE=0; VCB=10V;f=1MHz fT COB 导体 半 电 CONDITIONS 固 IN 2 TYP. 10 MAX UNIT 40 TOR 3 MHz 155 pF C U D ON IC M E ES G N A CH MIN Inchange Semiconductor Product Specification 2SC1894 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3