isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. n c . i m e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO IC VALUE s c s i . w 35 V Collector-Emitter Voltage RBE= ∞ 17 V Emitter-Base Voltage 4 V 2 A w w Collector Current Collector Power Dissipation @TC=25℃ 12.5 W PC Tj Tstg UNIT Collector Power Dissipation @Ta=25℃ 1.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 83 ℃/W Rth j-c Thermal Resistance,Junction to Case 10 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1971 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10mA, IE= 0 35 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 17 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA, IC= 0 4 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.5 mA hFE DC Current Gain IC= 0.1A; VCE= 10V PO Output Power ηC PARAMETER hFE Classifications X A 10-25 20-45 s c s i . w w w Collector Efficiency n c . i m e 180 6 7 W 60 70 % VCC= 13.5V; Pin= 0.6W; f= 175MHz B C D 35-70 55-110 90-180 isc Website：www.iscsemi.cn 10