Inchange Semiconductor Product Specification 2SC2027 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For high voltage ,power switching and TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V 5 A 7.5 A 50 W IC Collector current ICM Collector current-peak PT Total power dissipation Tj Junction temperature 175 ℃ Tstg Storage temperature -65~200 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2027 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 800 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4.0 A;IB=1.3 A 5.0 V VBEsat Base-emitter saturation voltage IC=4.0 A;IB=1.3 A 1.5 V ICBO Collector cut-off current VCB=600V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain IC=4.5A ; VCE=5V 2 MIN 8 2.25 TYP. MAX 36 UNIT Inchange Semiconductor Product Specification 2SC2027 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3