isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2137 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w MAX UNIT 500 V 400 V 6 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2137 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.0 V hFE DC Current Gain IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 400V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA 1.0 μs 2.0 μs 1.0 μs Switching Times tr tstg tf CONDITIONS B B n c . i m e s c s i . w w w Rise Time Storage Time Fall Time isc Website：www.iscsemi.cn MIN VCC= 200V; IB1= -IB2= 0.3A; RL= 40Ω TYP. MAX UNIT 10