isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION ·Collector-Emitter Breakdown Voltage:VCEO= 60V(Min) ·DC Current Gain: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation APPLICATIONS ·TV Horizontal Deflection Output Application n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i 5 V PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w VALUE UNIT 200 V 60 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 1 A B Collector Power Dissipation @ Ta=25℃ 1.5 W PC TJ Tstg Collector Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2233 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=0.4A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB=0.4A 1.5 V ICBO Collector Cutoff Current VCB= 170V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE -1 DC Current Gain IC= 1A ; VCE= 5V hFE -2 DC Current Gain IC= 4A ; VCE= 5V fT B B n c . i m e s c s i . w Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V w w isc Website：www.iscsemi.cn 30 2 150 20 8 MHz