isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2484 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·High Power Dissipation ·Complement to Type 2SA1060 APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w VALUE UNIT w w 80 V 80 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg n c . i m e Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2484 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V 1.8 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 μA hFE-1 DC Current Gain IC= 20mA ; VCE= 5V hFE-2 DC Current Gain hFE-3 DC Current Gain m e s isc fT CONDITIONS w. w w hFE-2 Classifications R Q 40-80 60-120 P IC= 3A; VCE= 5V IC= 0.5A; VCE= 5V 100-200 isc Website：www.iscsemi.cn TYP. 2 MAX 80 UNIT V B IC= 1A ; VCE= 5V Current-Gain—Bandwidth Product MIN 20 n c . i 40 220 20 20 MHz