Inchange Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1012 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 60 V Collector-emitter voltage Open base 50 V Emitter-base voltage Open collector 5 V A H C IN IC Collector current 5 A IB Base current 1 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER MIN TYP. MAX IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.15A 0.4 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.15A 1.2 V ICBO Collector cut-off current VCB=50V; IE=0 1 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 μA hFE –1 DC current gain IC=1A ; VCE=1V 70 hFE -2 DC current gain IC=3A ; VCE=1V 30 fT Transition frequency IC=1A ; VCE=4V Cob Output capacitance 体 导 半 固电 ton ts Storage time tf IC=3A ;IB1=- IB2=0.15A RL=10Ω,VCC=30V Fall time hFE-1 Classifications O Y 70-140 120-240 2 V 240 120 MHz 80 pF 0.1 μs 1.0 μs 0.1 μs R O T UC D N O IC f=1MHz ; VCB=10V EM S E NG A H C IN Turn-on time 50 UNIT Base-emitter breakdown voltage Switching times CONDITIONS Inchange Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC Inchange Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 5 D N O IC R O T UC