isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2657 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage MAX UNIT 800 V n c . i m e s c s i . w 500 V w w 8 V 1.5 A IC Collector Current-Continuous ICM Collector Current-Peak 3 A PC Collector Power Dissipation @TC=25℃ 70 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2657 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 800V;IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V hFE-2 DC Current Gain m e s isc fT w Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn TYP. IC= 0.2A; VCE= 10V IC= 1A ;IB1= -IB2= 0.2A MAX 500 UNIT V B . w w Switching Times MIN B IC= 1A ; VCE= 5V Current-Gain—Bandwidth Product ton CONDITIONS 15 n c . i 8 2.5 MHz 1 μs 3 μs 1 μs