isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2735 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF ~ VHF local oscillator, frequency converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2735 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 3 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA 1.0 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.5 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 40 Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 600 COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz CG Conversion Gain IC= 2mA ; VCC= 12V;f= 200MHz fOSC= 230MHz(0dBm) 21 dB NF Noise Figure IC= 2mA ; VCC= 12V;f= 200MHz fOSC= 230MHz(0dBm) 6.5 dB VOSC Oscillating output voltage IC= 7mA;VCC= 12V;fOSC= 300MHz 210 mV VOSC Oscillating output voltage IC= 7mA;VCC= 12V;fOSC= 930MHz 130 mV fT isc Website：www.iscsemi.cn 2 1200 0.85 MHz 1.5 pF INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC2735 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC2735 4