Inchange Semiconductor Product Specification 2SC2749 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high voltage,high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 5 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2749 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=10m A ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1m A ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1m A ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=6A; IB=1.2A 1.0 V VBE(sat) Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V ICBO Collector cut-off current VCB=400V IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE -2 DC current gain IC=5A ; VCE=5V 8 2 MIN TYP. MAX 80 UNIT Inchange Semiconductor Product Specification 2SC2749 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3