ISC 2SC2815

Inchange Semiconductor
Product Specification
2SC2815
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolut maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
VALUE
UNIT
Open emitter
300
V
Open base
250
V
6
V
5
A
40
W
Open collector
Collector current
Total power dissipation
TC=25℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Inchange Semiconductor
Product Specification
2SC2815
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=50mA ; IB=0
250
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.4A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.4A
1.2
V
ICBO
Collector cut-off current
VCB=300V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6.0V; IC=0
0.1
mA
hFE
DC current gain
IC=2.5A ; VCE=5V
2
MIN
40
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SC2815
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3